Fabrication and characterization of Si_1−xGe_x nanocrystals in as-grown and annealed structures: a comparative study

• Muhammad Taha Sultan,
• Adrian Valentin Maraloiu,
• Ionel Stavarache,
• Jón Tómas Gudmundsson,
• Andrei Manolescu,
• Valentin Serban Teodorescu,
• Magdalena Lidia Ciurea and
• Halldór Gudfinnur Svavarsson

Beilstein J. Nanotechnol. 2019, 10, 1873–1882, doi:10.3762/bjnano.10.182

• (111) peak shifted towards the standard Ge position) or SiOx (will be discussed later in this section). Hence, with increasing annealing temperatures, the formation of additional interfaces is likely to occur. In Figure 4a, a cross-sectional transmission electron microscopy (XTEM) image of the sample

Nanostructuring of GeTiO amorphous films by pulsed laser irradiation

• Valentin S. Teodorescu,
• Cornel Ghica,
• Adrian V. Maraloiu,
• Mihai Vlaicu,
• Andrei Kuncser,
• Magdalena L. Ciurea,
• Ionel Stavarache,
• Ana M. Lepadatu,
• Nicu D. Scarisoreanu,
• Andreea Andrei,
• Valentin Ion and
• Maria Dinescu

Beilstein J. Nanotechnol. 2015, 6, 893–900, doi:10.3762/bjnano.6.92

• ; cross-sectional transmission electron microscopy (XTEM); Introduction Laser pulse processing of surfaces and thin films is a useful tool for purposes such as the amorphous thin films crystallization [1][2][3][4][5][6], surface nanostructuring [7][8][9][10], laser-induced thin film dewetting [11][12

Synthesis of embedded Au nanostructures by ion irradiation: influence of ion induced viscous flow and sputtering

• Udai B. Singh,
• D. C. Agarwal,
• S. A. Khan,
• S. Mohapatra,
• H. Amekura,
• D. P. Datta,
• Ajay Kumar,
• R. K. Choudhury,
• T. K. Chan,
• Thomas Osipowicz and
• D. K. Avasthi

Beilstein J. Nanotechnol. 2014, 5, 105–110, doi:10.3762/bjnano.5.10

• , high-resolution Rutherford backscattering spectrometry (HRBS) with 500 keV He+ ions at an incident angle of 60° and a scattering angle of 65° and an energy resolution of the detector of about 1 keV was carried out at NUS, Singapore [25]. Cross sectional transmission electron microscopy (XTEM